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AON4604 Complementary Enhancement Mode Field Effect Transistor
General Description
The AON4604 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AON4604 is Pb-free (meets ROHS & Sony 259 specifications).
Features n-channel
VDS (V) = 20V ID = 5.4A RDS(ON) < 42m RDS(ON) < 52m RDS(ON) < 72m
p-channel
-20V -3.8A (VGS= 4.5V)
< 90m (VGS = 4.5V) < 120m (VGS = 2.5V) < 170m (VGS = 1.8V)
D1 D2
DFN3X2-8L
S1 G1 S2 G2
1 2 3 4
8 7 6 5
D1 D1 D2 D2
G1 S1
G2 S2
n-channel Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 20 VGS Gate-Source Voltage 8 Continuous Drain Current A Pulsed Drain Current B TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics: n-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics: p-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TA=25C TA=70C ID IDM PD TJ, TSTG 5.4 4.3 15 1.9 1.2 -55 to 150
p-channel Units V V A
Max p-channel -20 8 -3.8 -3.0 -15 1.9 1.2 -55 to 150
W C
Symbol t 10s Steady-State Steady-State RJA RJL Symbol t 10s Steady-State Steady-State RJA RJL
Typ 51.5 82 37 Typ 51.5 82 37
Max 65 100 50 Max 65 100 50
Units C/W C/W C/W Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4604
n-channel Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=5.4A Static Drain-Source On-Resistance TJ=125C VGS=2.5V, ID=4.8A VGS=1.8V, ID=4A gFS VSD IS Forward Transconductance VDS=5V, ID=5.4A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.4 15 34 50 43 57 11 0.8 1 2.5 436 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 66 44 3 6.5 VGS=4.5V, VDS=10V, ID=5.4A 0.8 2.1 7 VGS=5V, VDS=10V, RL=1.9, RGEN=6 IF=5.4A, dI/dt=100A/s 11.2 36.5 12.5 15.2 4.7 42 70 52 72 0.7 Min 20 1 5 100 1 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=5.4A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in The SOA curve provides a single pulse rating. Rev0 : October 2006
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4604
TYPICAL N-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
16 8V 12 3V 2.5V 4.5V 5 2V ID(A) 4 3 2 4 VGS=1.5V 1 25C 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 100 Normalized On-Resistance 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0 4 8 12 -50 -25 0 25 50 75 100 125 150 175 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=1.8V ID=4A VGS=4.5V ID=5.4A 0 0 0.5 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics 125C -40C 6 VDS=5V
ID (A)
8
VGS=2.5V ID=4.8A
80 RDS(ON) (m)
VGS=1.8V
60
VGS=2.5V
40 VGS=4.5V 20
100 90 80 RDS(ON) (m) 70 IS (A) 60 50 40 30 20 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=5.4A
1E+01 125C 1E+00 1E-01 1E-02 1E-03 -40C 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4604
TYPICAL N-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics VDS=10V ID=5.4A 800
Capacitance (pF)
600
Ciss
400
200
Coss
Crss
100.00
20 10s Power (W) 100s TJ(Max)=150C TA=25C 15
10.00 ID (Amps)
1.00
RDS(ON) limited TJ(Max)=150C TA=25C DC
0.10
1ms 10ms 0.1s 1s 10s
10
5
0.01 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=65C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4604
p-channel MOSFET Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-3.8A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-2.5V, ID=-3.3A VGS=-1.8V, ID=-2.8A gFS VSD IS Forward Transconductance VDS=-5V, ID=-3.8A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.3 -15 73 102 95 130 7 -0.83 -1 -2.5 540 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 72 49 12 5.9 VGS=-4.5V, VDS=-10V, ID=-3.8A 0.9 1.9 11.5 VGS=-4.5V, VDS=-10V, RL=2.6, RGEN=3 IF=-3.8A, dI/dt=100A/s 15.5 37.5 23 23.1 8.9 18 90 125 120 170 -0.63 Min -20 -1 -5 100 -1 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-3.8A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev0 : October 2006
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4604
TYPICAL P-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
15 -4.5V -3.0V -8V 10 -ID (A) -ID(A) -2.0V 4 -2.5V 6 VDS=-5V
25C 2
5 VGS=-1.5V
125C -40C 0 0 2 3 4 -VDS (Volts) Figure 1: On-Region Characteristics 1 5 0 0 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics 0.5 2
150 VGS=-1.8V 125 RDS(ON) (m)
1.8 Normalized On-Resistance 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 ID=-3.8A 1E-01 125C -IS (A) 1E-02 1E-03 1E-04 25C 1E-05 -40C 125C VGS=-2.5V ID=-3.3A VGS=-1.8V ID=-2.8A VGS=-4.5V ID=-3.8A
100 VGS=-2.5V 75 VGS=-4.5V 50 0 2 4 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 150
130 RDS(ON) (m)
110
90
25C
70
50 0 2 4 6 8 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4604
TYPICAL P-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
5 VDS=-10V ID=-3.8A Capacitance (pF) 800
4 -VGS (Volts)
600
Ciss
3
400
2
1
200
Crss Coss
0 0 1 2 3 4 5 6 -Qg (nC) Figure 7: Gate-Charge Characteristics
0 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics
100.00 10s 10.00 -ID (Amps) 100s 1.00 RDS(ON) limited TJ(Max)=150C TA=25C DC 1ms 10ms 0.1s 10s Power (W)
20 TJ(Max)=150C TA=25C 15
10
0.10
5
0.01 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=65C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 T
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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